Abel ching nam sheng
composite transistor

ABSTRACT

THE COMPOSITE TRANSISTOR INTEGRATED WITHIN A COMMON SEMICONDUCTOR BODY COMPRISES A COMMON-EMITTER AMPLIFIER CONNECTION OF A LATERAL-STRUCTURE TRANSISTOR WITH ITS BASE-EMITTER JUNCTION PARALLEL BY A DIODE-CONNECTION OF A VERTICAL-STRUCTURE TRANSISTOR. THE MAGNITUDE OF THE &#34;COMMON-EMITTER FORWARD CURRENT GAIN&#34; OF THE COMPOSITE TRANSISTOR IS THE RATIO OF A SATURATION CURRENT OF THE LATERALSTRUCTURE TRANSISTOR TO THE SATURATION CURRENT OF THE VERTICAL STRUCTURE TRANSISTOR, WHICH CURRENT GAIN IS SHOWN TO BE INDEPENDENT OF TEMPERATURE.

EFENSWE PULICATION UNITED STATES PATENT AND TRADEMARK OFFICE Published at the request of the applicant or owner in accordance with the Notice of Dec. 16,1969, 869 0.G. 687. The abstracts of Defensive Publication applications are identified by distinctly numbered series and are arranged chronologically. The heading of each abstract indicates the number of pages of specification, including claims and sheets of drawings contained in the application as originally filed. The files of these applications are available to the public for inspection and reproduction may be purchased for 30 cents a sheet.

Defensive Publication applications have not been examined as to the merits of alleged invention. The Patent and Trademark Otlice makes no assertion as to the novelty of the disclosed subject matter.

PUBLISHED MAY 6, 1975 T934309 COMPOSITE TRANSISTOR Abel Citing Nam Sheng, Morris Plains, N.J., assignor to RCA Corporation Filed Apr. 11, 1974, Ser. No. 459,953 Int. Cl. H01l 19/00 U.S. Cl. 357--44 2 Sheets Drawing. 10 Pages Specification I (i l F340 lit. '1 35 46 1:133 lfllh l 35 7 t 

